High quality AlGaAs layers grown by molecular beam epitaxy at low temperatures
Identifieur interne : 000330 ( Main/Exploration ); précédent : 000329; suivant : 000331High quality AlGaAs layers grown by molecular beam epitaxy at low temperatures
Auteurs : RBID : ISTEX:10854_1992_Article_BF00701087.pdfAbstract
Low-temperature (∼600 °C) molecular beam epitaxy (MBE) growth of AlGaAs has been studied. It was found that the quality of AlGaAs grown at low temperatures can be as good as that grown at high temperatures (>700 °C) if the source materials and the growth chamber are very clean. The threshold currents of Al0.6Ga0.4As/Al0.15Ga0.85As/Al0.6Ga0.4As double heterostructure (DH) lasers grown at low temperatures and high temperatures are almost the same. The material quality can be further improved with a proper amount of indium doping. Photoluminescence (PL) linewidths of 3.1 meV and 1.7 meV have been measured for Indoped Al0.42Ga0.58As and Al0.18Ga0.82As at 4 K, respectively. They are the narrowest linewidths for the MBE-grown AlGaAs with comparable Al contents at any growth temperature. With a proper amount of In doping, double-barrier resonant tunnelling diodes have also shown improved peak-to-valley current ratios.
DOI: 10.1007/BF00701087
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<record><TEI><teiHeader><fileDesc><titleStmt><title>High quality AlGaAs layers grown by molecular beam epitaxy at low temperatures</title><author><name>K. H. Chang</name><affiliation wicri:level="1"><mods:affiliation>Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsin-Chu, Taiwan, ROC</mods:affiliation><country xml:lang="fr" wicri:curation="lc">République populaire de Chine</country><wicri:regionArea>Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsin-Chu, Taiwan</wicri:regionArea><wicri:noRegion>Taiwan</wicri:noRegion></affiliation></author><author><name>J. S. Wu</name><affiliation wicri:level="1"><mods:affiliation>Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsin-Chu, Taiwan, ROC</mods:affiliation><country xml:lang="fr" wicri:curation="lc">République populaire de Chine</country><wicri:regionArea>Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsin-Chu, Taiwan</wicri:regionArea><wicri:noRegion>Taiwan</wicri:noRegion></affiliation></author><author><name>D. G. Liu</name><affiliation wicri:level="1"><mods:affiliation>Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsin-Chu, Taiwan, ROC</mods:affiliation><country xml:lang="fr" wicri:curation="lc">République populaire de Chine</country><wicri:regionArea>Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsin-Chu, Taiwan</wicri:regionArea><wicri:noRegion>Taiwan</wicri:noRegion></affiliation></author><author><name>D. C. Liou</name><affiliation wicri:level="1"><mods:affiliation>Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsin-Chu, Taiwan, ROC</mods:affiliation><country xml:lang="fr" wicri:curation="lc">République populaire de Chine</country><wicri:regionArea>Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsin-Chu, Taiwan</wicri:regionArea><wicri:noRegion>Taiwan</wicri:noRegion></affiliation></author><author><name>C. P. Lee</name><affiliation wicri:level="1"><mods:affiliation>Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsin-Chu, Taiwan, ROC</mods:affiliation><country xml:lang="fr" wicri:curation="lc">République populaire de Chine</country><wicri:regionArea>Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsin-Chu, Taiwan</wicri:regionArea><wicri:noRegion>Taiwan</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="RBID">ISTEX:10854_1992_Article_BF00701087.pdf</idno><date when="1992">1992</date><idno type="doi">10.1007/BF00701087</idno><idno type="wicri:Area/Main/Corpus">000C18</idno><idno type="wicri:Area/Main/Curation">000C18</idno><idno type="wicri:Area/Main/Exploration">000330</idno></publicationStmt></fileDesc><profileDesc><textClass></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="eng">Low-temperature (∼600 °C) molecular beam epitaxy (MBE) growth of AlGaAs has been studied. It was found that the quality of AlGaAs grown at low temperatures can be as good as that grown at high temperatures (>700 °C) if the source materials and the growth chamber are very clean. The threshold currents of Al0.6Ga0.4As/Al0.15Ga0.85As/Al0.6Ga0.4As double heterostructure (DH) lasers grown at low temperatures and high temperatures are almost the same. The material quality can be further improved with a proper amount of indium doping. Photoluminescence (PL) linewidths of 3.1 meV and 1.7 meV have been measured for Indoped Al0.42Ga0.58As and Al0.18Ga0.82As at 4 K, respectively. They are the narrowest linewidths for the MBE-grown AlGaAs with comparable Al contents at any growth temperature. With a proper amount of In doping, double-barrier resonant tunnelling diodes have also shown improved peak-to-valley current ratios.</div></front></TEI><mods xsi:schemaLocation="http://www.loc.gov/mods/v3 file:///applis/istex/home/loadistex/home/etc/xsd/mods.xsd" version="3.4" istexId="d52720d3f4431cea849cdda75360bf82c1902d9a"><titleInfo lang="eng"><title>High quality AlGaAs layers grown by molecular beam epitaxy at low temperatures</title></titleInfo><name type="personal"><namePart type="given">K. H.</namePart><namePart type="family">Chang</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsin-Chu, Taiwan, ROC</affiliation></name><name type="personal"><namePart type="given">J. S.</namePart><namePart type="family">Wu</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsin-Chu, Taiwan, ROC</affiliation></name><name type="personal"><namePart type="given">D. G.</namePart><namePart type="family">Liu</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsin-Chu, Taiwan, ROC</affiliation></name><name type="personal"><namePart type="given">D. C.</namePart><namePart type="family">Liou</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsin-Chu, Taiwan, ROC</affiliation></name><name type="personal"><namePart type="given">C. P.</namePart><namePart type="family">Lee</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsin-Chu, Taiwan, ROC</affiliation></name><typeOfResource>text</typeOfResource><genre>Papers</genre><genre>Original Paper</genre><originInfo><publisher>Kluwer Academic Publishers, Dordrecht</publisher><dateCreated encoding="w3cdtf">1991-03-27</dateCreated><dateCaptured encoding="w3cdtf">1991-07-04</dateCaptured><dateValid encoding="w3cdtf">2004-11-11</dateValid><copyrightDate encoding="w3cdtf">1992</copyrightDate></originInfo><language><languageTerm type="code" authority="iso639-2b">eng</languageTerm></language><physicalDescription><internetMediaType>text/html</internetMediaType></physicalDescription><abstract lang="eng">Low-temperature (∼600 °C) molecular beam epitaxy (MBE) growth of AlGaAs has been studied. It was found that the quality of AlGaAs grown at low temperatures can be as good as that grown at high temperatures (>700 °C) if the source materials and the growth chamber are very clean. The threshold currents of Al0.6Ga0.4As/Al0.15Ga0.85As/Al0.6Ga0.4As double heterostructure (DH) lasers grown at low temperatures and high temperatures are almost the same. The material quality can be further improved with a proper amount of indium doping. Photoluminescence (PL) linewidths of 3.1 meV and 1.7 meV have been measured for Indoped Al0.42Ga0.58As and Al0.18Ga0.82As at 4 K, respectively. They are the narrowest linewidths for the MBE-grown AlGaAs with comparable Al contents at any growth temperature. With a proper amount of In doping, double-barrier resonant tunnelling diodes have also shown improved peak-to-valley current ratios.</abstract><relatedItem type="series"><titleInfo type="abbreviated"><title>J Mater Sci: Mater Electron</title></titleInfo><titleInfo><title>Journal of Materials Science: Materials in Electronics</title><partNumber>Year: 1992</partNumber><partNumber>Volume: 3</partNumber><partNumber>Number: 1</partNumber></titleInfo><genre>Archive Journal</genre><originInfo><dateIssued encoding="w3cdtf">1992-03-01</dateIssued><copyrightDate encoding="w3cdtf">1992</copyrightDate></originInfo><subject usage="primary"><topic>Chemistry</topic><topic>Optical and Electronic Materials</topic><topic>Characterization and Evaluation Materials</topic></subject><identifier type="issn">0957-4522</identifier><identifier type="issn">Electronic: 1573-482X</identifier><identifier type="matrixNumber">10854</identifier><identifier type="local">IssueArticleCount: 14</identifier><recordInfo><recordOrigin>Chapman & Hall, 1992</recordOrigin></recordInfo></relatedItem><identifier type="doi">10.1007/BF00701087</identifier><identifier type="matrixNumber">Art4</identifier><identifier type="local">BF00701087</identifier><accessCondition type="use and reproduction">MetadataGrant: OpenAccess</accessCondition><accessCondition type="use and reproduction">AbstractGrant: OpenAccess</accessCondition><accessCondition type="restriction on access">BodyPDFGrant: Restricted</accessCondition><accessCondition type="restriction on access">BodyHTMLGrant: Restricted</accessCondition><accessCondition type="restriction on access">BibliographyGrant: Restricted</accessCondition><accessCondition type="restriction on access">ESMGrant: Restricted</accessCondition><part><extent unit="pages"><start>11</start><end>15</end></extent></part><recordInfo><recordOrigin>Chapman & Hall, 1992</recordOrigin><recordIdentifier>10854_1992_Article_BF00701087.pdf</recordIdentifier></recordInfo></mods></record>Pour manipuler ce document sous Unix (Dilib)
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